BFU725F_N1_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high gain microwave transistor
 Noise figure (NF) = 0.7 dB at 5.8 GHz
 High maximum stable gain 27 dB at 1.8 GHz
 110 GHz f_T silicon germanium technology
1.3 Applications
 2nd LNA stage and mixer stage in DBS LNB’s
 Satellite radio
 Low noise amplifiers for microwave communications systems
 WLAN and CDMA applications
 Analog/digital cordless applications
 Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CBO
V_CEO
V_EBO
I_C
P_tot
h_FE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
T_sp  90 C
I_C = 10 mA; V_CE = 2 V;
T_j = 25 C
Min Typ Max Unit
--
10 V
--
2.8 V
--
1.0 V
- 25 40 mA
[1] _-
-
136 mW
160 280 400