BFG31 Datasheet, PDF (5/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
40
handbook, halfpage
d im
(dB)
45
MBB348
50
55
60
65
40
60
80
100
I _C (mA)
V_CE = −10 V; V_o = 650 mV; T_amb = 25 °C;
f_(p+q−r) = 443.25 MHz.
Fig.6 Intermodulation distortion as a function
of collector current.
50
handbook, halfpage
d _im
(dB)
55
MBB349
60
65
40
60
80
100
120
I _C (mA)
V_CE = −10 V; V_o = 550 mV; T_amb = 25 °C;
f_(p+q−r) = 848.25 MHz.
Fig.7 Intermodulation distortion as a function
of collector current.
handbook,¹h⁰alfpage
d2
(dB)
20
MBB350
30
40
50
60
10
30
50
70
90
110
I _C (mA)
V_CE = −10 V; V_o = 50 dBmV; T_amb = 25 °C;
f_(p+q) = 450 MHz.
Fig.8 Second order intermodulation distortion
as a function of collector current.
handbook,¹h⁰alfpage
d2
(dB)
20
MBB351
30
40
50
60
10
30
50
70
90
110
I _C (mA)
V_CE = −10 V; V_o = 50 dBmV; T_amb = 25 °C;
f_(p+q) = 810 MHz.
Fig.9 Second order intermodulation distortion
as a function of collector current.
1995 Sep 12
5