BFG31 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
FEATURES
• High output voltage capability
• High gain bandwidth product
• Good thermal stability
• Gold metallization ensures
excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
QUICK REFERENCE DATA
SYMBOL
V_CEO
I_C
P_tot
h_FE
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
f_T
transition frequency
G_UM
maximum unilateral power
gain
V_o
output voltage
CONDITIONS
open base
up to T_s = 135 °C ; note 1
I_C = −70 mA; V_CE = −10 V;
T_amb = 25 °C
I_C = −70 mA; V_CE = −10 V;
f = 500 MHz; T_amb = 25 °C
I_C = −70 mA; V_CE = −10 V;
f = 800 MHz; T_amb = 25 °C
I_C = −100 mA; V_CE = −10 V;
R_L = 75 Ω; T_amb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 135 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
page
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
MIN.
−
−
−
25
TYP.
−
−
−
−
MAX.
−15
−100
1
−
UNIT
V
mA
W
−
5.0
−
GHz
−
12
−
dB
−
600 −
mV
MIN.
−
−
−
−
−
−65
−
MAX.
−20
−15
−3
−100
1
150
175
UNIT
V
V
V
mA
W
°C
°C