BFG31 Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 135 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
40 K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
C_cb
collector-base capacitance
C_eb
emitter-base capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power gain; note 1
V_o
output voltage
V_o
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter; I_C = −10 mA
−20 −
−
open base; I_C = −10 mA
−18 −
−
open collector; I_E = −0.1 mA −3 −
−
I_E = 0; V_CB = −10 V
−
−
−1
I_C = −70 mA; V_CE = −10 V;
25 −
−
T_amb = 25 °C
I_C = 0; V_CB = −10 V; f = 1 MHz; −
1.8 −
I_C = 0; V_EB = −10 V; f = 1 MHz −
5
−
I_C = 0; V_CE = −10 V; f = 1 MHz; −
T_amb = 25 °C
1.6 −
I_C = −70 mA; V_CE = −10 V;
−
5
−
f = 500 MHz; T_amb = 25 °C
I_C = −70 mA; V_CE = −10 V;
−
16 −
f = 500 MHz; T_amb = 25 °C
I_C = −70 mA; V_CE = −10 V;
−
12 −
f = 800 MHz; T_amb = 25 °C
note 2
−
600 −
V
V
V
µA
pF
pF
pF
GHz
dB
dB
mV
note 3
−
550 −
mV
Notes
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
2. d_im = −60 dB; I_C = −70 mA; V_CE = −10 V; R_L = 75 Ω; T_amb = 25 °C;
G_UM
=
10
log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB.
V_p = V_o at d_im = −60 dB; f_p = 850.25 MHz;
V_q = V_o −6 dB; f_q = 858.25 MHz;
V_r = V_o −6 dB;f_r = 860.25 MHz;
measured at f_(p+q−r) = 848.25 MHz.
3. d_im = −60 dB (DIN 45004B); I_C = −70 mA; V_CE = −10 V; R_L = 75 Ω; T_amb = 25 °C;
V_p = V_o = at d_im = −60 dB; f_p = 445.25 MHz;
V_q = V_o −6 dB; f_q = 453.25 MHz;
V_r = V_o −6 dB; f_r = 455.25 MHz;
measured at f_(p+q−r) = 443.25 MHz.
1995 Sep 12
3