BFG31 Datasheet, PDF (4/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
han_Pd_tb_oo_tok¹, ^.h²alfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB344
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
handbook,⁸h⁰alfpage
h _FE
60
MBB345
40
20
0
0
100
I _C (mA)
200
V_CE = −10 V; T_amb = 25 °C.
Fig.3 DC current gain as a function of collector
current.
handbook, h⁶alfpage
C _re
(pF)
5
4
3
2
1
0
10
MBB346
20 _{VCE (V)} 30
f = 1 MHz; T_amb = 25 °C
Fig.4 Feedback capacitance as a function of
collector-emitter voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB347
4
2
0
0
50
I _C (mA)
100
V_CE = −10 V; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
1995 Sep 12
4