BFG17A Datasheet, PDF (5/9 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor

Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFG17A
handbook, h⁴alfpage
fT
(GHz)
3
MBB373
2
0
10
20
30
IC (mA)
V_CE = 5 V; f = 500 MHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
40
handbook, halfpage
G _UM
(dB)
30
20
10
0
10²
MBB371
10 ³
f (MHz)
10⁴
I_C = 15 mA; V_CE = 10 V; T_amb = 25 °C.
Fig.6 Maximum unilateral power gain as a
function of frequency.
handbook, h⁵alfpage
F
(dB)
4
3
2
1
0
0
4
MBB372
8
12
16
20
I _C (mA)
V_CE = 5 V; f = 800 MHz; T_amb = 25 °C; Z_S = 60 Ω; b_s = opt.
Fig.7 Minimum noise figure as a function of
collector current.
1995 Sep 12
5