BFG17A Datasheet, PDF (2/9 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor

Philips Semiconductors
NPN 3 GHz wideband transistor
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN
DESCRIPTION
Code: E6
1
collector
2
base
3
emitter
4
emitter
Product specification
BFG17A
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
C_re
G_UM
F
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
CONDITIONS
open emitter
open base
up to T_s = 85 °C; note 1
I_C = 25 mA; V_CE = 1 V;
T_amb = 25 °C
I_C = 25 mA; V_CE = 5 V;
f = 500 MHz; T_amb = 25 °C
I_C = 0; V_CE = 5 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 °C
I_C = 2 mA; V_CE = 5 V; f = 800 MHz;
T_amb = 25 °C; Z_S = 60 Ω; b_s = opt.
MIN.
−
−
−
−
20
−
−
−
−
TYP.
−
−
−
−
−
2.8
0.4
15
2.5
MAX. UNIT
25
V
15
V
50
mA
300 mW
150
−
GHz
−
pF
−
dB
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 85 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
25
V
15
V
2.5 V
50
mA
300 mW
+150 °C
175 °C
1995 Sep 12
2