BFG17A Datasheet, PDF (3/9 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor

Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFG17A
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
CONDITIONS
thermal resistance from junction up to T_s = 85 °C; note 1
to soldering point
Note
1. T_s is the temperature at the soldering point of the collector tab.
VALUE
290
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
I_CBO
h_FE
f_T
C_c
C_e
C_re
G_UM
F
V_o
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
output voltage
CONDITIONS
I_E = 0; V_CB = 10 V
I_C = 25 mA; V_CE = 1 V;
T_amb = 25 °C
I_C = 25 mA; V_CE = 5 V;
f = 500 MHz; T_amb = 25 °C
I_E = 0; V_CB = 10 V; f = 1 MHz;
T_amb = 25 °C
I_C = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 0; V_CE = 5 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 °C
I_C = 2 mA; V_CE = 5 V; f = 800 MHz;
T_amb = 25 °C; Z_S = 60 Ω; b_s = opt.
note 2
MIN.
−
20
−
−
−
−
−
−
−
TYP.
−
75
2.8
0.7
1.25
0.4
15
2.5
150
MAX. UNIT
50
nA
150
−
GHz
−
pF
−
pF
−
pF
−
dB
−
dB
−
mV
Notes
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM
=
10
log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB. .
2. d_im = −60 dB (DIN 45004B, para. 6,3: 3-tone); I_C = 14 mA; V_CE = 10 V; Z_L = 75 Ω.
V_p = V_o; f_p = 795.25 MHz;
V_q = V_o −6 dB; f_q = 803.25 MHz;
V_r = V_o −6 dB; f_r = 805.25 MHz;
measured at f_(p+q−r) = 793.25 MHz.
1995 Sep 12
3