BFG17A Datasheet, PDF (4/9 Pages) NXP Semiconductors – NPN 3 GHz wideband transistor

Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFG17A
handbook, full pagewidth
VBB
75 Ω
input
1.5 nF
10 kΩ
L1
1 nF
L2
270 Ω
L3
1 nF
1.5 nF
VCC
1 nF
75 Ω
output
DUT
3.3 pF
18 Ω 0.68 pF
MBB251
(1) L1 = L3 = 5 µH Ferroxcube choke.
(2) L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit.
120
handbook, halfpage
h _FE
80
MBB374
handbook¹, ^.h²alfpage
Cc
(pF)
0.8
MBB370
40
0.4
0
0
10
20
30
IC (mA)
0
0
4
8
12
16
VCB (V)
V_CE = 1 V; T_amb = 25 °C.
Fig.3 DC current gain as function of collector
current.
1995 Sep 12
I_E = 0; f = 1 MHz; T_amb = 25 °C
Fig.4 Collector capacitance as a function of
collector-base voltage.
4