BDX45 Datasheet, PDF (5/8 Pages) NXP Semiconductors – PNP Darlington transistors

Philips Semiconductors
PNP Darlington transistors
Product specification
BDX45; BDX47
6000
handbook, full pagewidth
hFE
5000
4000
3000
2000
1000
0
−10^−1
V_CE = −10 V.
MGD839
−1
−10
−10²
IC (mA)
−10³
Fig.2 DC current gain; typical values.
andbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450 Ω
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450 Ω
DUT
MGD624
V_i = −10 V; T = 200 µs; t_p = 6 µs; t_r = t_f ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; R_B = 10 kΩ; R_C = 18 Ω.
V_BB = 1.8 V; V_CC = −10.7 V.
Oscilloscope input impedance Z_i = 50 Ω.
Fig.3 Test circuit for switching times.
1997 Jul 02
5