BDX45 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP Darlington transistors

Philips Semiconductors
PNP Darlington transistors
Product specification
BDX45; BDX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
collector-base voltage
BDX45
BDX47
collector-emitter voltage
BDX45
BDX47
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
V_BE = 0
open collector
T_amb ≤ 25 °C
T_mb ≤ 100 °C
MIN.
MAX.
UNIT
−
−60
V
−
−90
V
−
−45
V
−
−80
V
−
−5
V
−
−1
A
−
−2
A
−
−100
mA
−
1.25
W
−
5
W
−65
+150
°C
−
150
°C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
R_{th j-mb}
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
1997 Jul 02
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