BDX45 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP Darlington transistors

Philips Semiconductors
PNP Darlington transistors
Product specification
BDX45; BDX47
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
– print hammers
– solenoids
– relay and lamp drivers.
DESCRIPTION
PNP Darlington transistor in a TO-126; SOT32 plastic
package. NPN complements: BDX42 and BDX44.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1 2 3 _{Top view}
MAM350
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BDX45
BDX47
V_CES
collector-emitter voltage
BDX45
BDX47
I_C
collector current (DC)
P_tot
total power dissipation
h_FE
DC current gain
f_T
transition frequency
CONDITIONS
open emitter
V_BE = 0
T_amb ≤ 25 °C
T_mb ≤ 100 °C
I_C = −150 mA; V_CE = −10 V
I_C = −500 mA; V_CE = −10 V
I_C = −500 mA; V_CE = −5 V; f = 100 MHz
MIN.
−
−
−
−
−
−
−
1 000
2 000
−
TYP.
−
−
−
−
−
−
−
−
−
200
MAX. UNIT
−60 V
−90 V
−45 V
−80 V
−1
A
1.25 W
5
W
−
−
−
MHz
1997 Jul 02
2