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BDX45 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP Darlington transistors
◁
Philips Semiconductors
PNP Darlington transistors
Product specification
BDX45; BDX47
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICES
IEBO
hFE
VCEsat
VBEsat
fT
collector cut-off current
BDX45
BDX47
collector cut-off current
BDX45
BDX47
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
IE = 0; VCB = −60 V
IE = 0; VCB = −90 V
−
−
−
−
VBE = 0; VCE = −45 V
−
−
VBE = 0; VCE = −80 V
−
−
IC = 0; VEB = −4 V
−
−
VCE = −10 V; see Fig. 2
IC = −150 mA
1000 −
IC = −500 mA
2000 −
IC = −500 mA; IB = −0.5 mA
−
−
IC = −500 mA; IB = −0.5 mA; Tj = 150 °C −
−
IC = −1 A; IB = −4 mA
−
−
IC = −1 A; IB = −4 mA; Tj = 150 °C
−
−
IC = −500 mA; IB = −0.5 mA
−
−
IC = −1 A; IB = −4 mA
−
−
IC = −500 mA; VCE = −5 V; f = 100 MHz −
200
Switching times (between 10% and 90% levels); see Fig.3
−100 nA
−100 nA
−50 nA
−50 nA
−50 nA
−
−
−1.3 V
−1.3 V
−1.6 V
−1.6 V
−1.9 V
−2.2 V
−
MHz
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
−
500 ns
−
−
200 ns
−
−
300 ns
−
−
700 ns
−
−
550 ns
−
−
150 ns
1997 Jul 02
4
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