SA5222 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Low-power FDDI transimpedance amplifier

Philips Semiconductors
Low-power FDDI transimpedance amplifier
Product specification
SA5222
TEST CIRCUITS (continued)
TEST CIRCUITS (continued)
PULSE GEN
OFFSET
0.1uF
1kΩ
50Ω
5V
OUT
IN DUT
OUT
1kΩ ^.1µF
1kΩ ^.1µF
A _{ZO = 50Ω}
OSCILLOSCOPE
B _{ZO = 50Ω}
GND₁
GND₂
Meaurement done using
differential wave forms
Test Circuit 4: Duty Cycle Distortion
Figure 5. Test Circuit4
5V
I_{IN (µA)}
OUT +
OUT –
GND₁
GND₂
Typical V_O (Differential) vs I_IN
+
V_O (VOLTS)
–
1995 Apr 26
2.25
1.80
1.35
0.90
0.45
0.00
–0.45
–0.90
V_O
7
V_O
V_O ⁵
3
V_O1
V_O
S
V_O2
V_O4
V_O6
–1.35
–1.80
V_O8
–2.25
–200 –160 –120 –80 –40
0
40
80
120
160 200
CURRENT INPUT (µA)
SA5222 TEST CONDITIONS
Procedure 1 _{RT measured at 30µA}
R_T = (V_O1 - V_O2) / (+30µA - (-30µA)
Where:
V_O1 Measure at I_IN = +30µA
V_O2 Measured at I_IN = -30µA
Procedure 2 _{Linearity = 1 - ABS((VOA - VOB / (VO3 - VO4))}
Where:
V_O3 Measured at I_IN = +60µA
V_O4 Measured at I_IN = -60µA
V_OA = R_T x (+60µA) + V_OS
V_OB = R_T x (-60µA) + V_OS
Procedure 3 _{VOMAX = VO7 - VO8}
Where:
V_O7 Measured at I_IN = +130µA
V_O8 Measured at I_IN = -130µA
Procedure 4 _{IINMAX Test Pass Conditions:}
V_O7 - V_O5 > 50mV and V_O6 - V_O8 < 50mV
Where:
V_O5 Measured at I_IN = +80µA
V_O6 Measured at I_IN = -80µA
V_O7 Measured at I_IN = +130µA
V_OB Measured at I_IN = -130µA
Test Circuit 5: DC Tests
Figure 6. Test Circuit5
4
SD00364
SD00365