SA5222 Datasheet, PDF (1/8 Pages) NXP Semiconductors – Low-power FDDI transimpedance amplifier

Philips Semiconductors
Low-power FDDI transimpedance amplifier
Product specification
SA5222
DESCRIPTION
The NE/SA5222 is a low-power, wide-band, low noise
transimpedance amplifier with differential outputs, optimized for
signal recovery in FDDI fiber optic receivers. The part is also suited
for many other RF and fiber optic applications as a general purpose
gain block.
FEATURES
• Extremely low noise:2.0pA^{ń ǸHz}
• Single 5V supply
• Low supply current: 9mA
• Large bandwidth: 165MHz
• Differential outputs
• Low output offset
• Low input/output impedances
• High power-supply-rejection ratio: 55dB
• Tight transresistance control
• High input overload: 115µA
• ESD protected
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) package
PIN DESCRIPTION
D Package
V_CC1 1
GND₁ ²
IN ³
GND₁ ⁴
8 V_CC2
7 OUT
6 _OUT
5 _GND2
Figure 1. Pin Configuration
APPLICATIONS
• FDDI preamp
• Current-to-voltage converters
• Wide-band gain block
• Medical and scientific instrumentation
• Sensor preamplifiers
• Single-ended to differential conversion
• Low noise RF amplifiers
• RF signal processing
SD00360
TEMPERATURE RANGE
-40 to +85°C
ORDER CODE
SA5222D
DWG #
SOT96-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V_CC1,2
Power supply voltage
6
V
T_A
Ambient temperature range
-40 to +85
°C
T_J
Junction temperature range
-55 to +150
°C
T_STG
P_D
Storage temperature range
Power dissipation T_A = 25^oC (still air)¹
-65 to +150
°C
0.78
W
I_INMAX
Maximum input current
5
mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ_JA = 158^oC/W. Derate
6.2mW/°C above 25°C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC1,2
Power supply voltage
T_A
Ambient temperature range: SA grade
T_J
Junction temperature range: SA grade
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNITS
V
°C
°C
1995 Apr 26
1
853-1582 15170