BFG325 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 14 GHz wideband transistor

Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
250
P_tot
(mW)
200
150
100
50
0
0
50
100
Fig 1. Power derating curve
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150
200
T_sp (°C)
0.34
C_CBS
(pF)
0.30
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0.26
35
I_C
(mA)
30
25
20
15
10
5
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I_B = 350 µA
300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
0
0
1
2
3
4
5
6
V_CE (V)
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
40
G
(dB)
30
MSG
s₂₁ ²
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20
G_max
10
0.22
0
1
2
3
4
5
V_CB (V)
I_C = 0 mA; f = 1 MHz.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
0
10
10²
10³
10⁴
f (MHz)
I_C = 15 mA; V_CE = 3 V.
Fig 4. Gain as a function of frequency; typical values
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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