BFG325 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN 14 GHz wideband transistor

BFG325/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVision (SATV) tuners
x repeater amplifiers in fiber-optic systems
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
V_CBO collector-base voltage
V_CEO collector-emitter voltage
I_C
collector current (DC)
P_tot
total power dissipation
h_FE
DC current gain
C_CBS
f_T
collector-base
capacitance
transition frequency
G_max maximum power gain ^[2]
Conditions
open emitter
open base
T_sp ≤ 90 °C
I_C = 15 mA; V_CE = 3 V;
T_j = 25 °C
V_CB = 5 V; f = 1 MHz;
emitter grounded
I_C = 15 mA; V_CE = 3 V;
f = 1 GHz; T_amb = 25 °C
I_C = 15 mA; V_CE = 3 V;
f = 1.8 GHz; T_amb = 25 °C
Min
-
-
-
[1] _-
60
-
-
-
Typ Max Unit
-
15 V
-
6
V
-
35 mA
-
210 mW
100 200
0.26 0.4 pF
14 -
GHz
18.3 -
dB