BFG325 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 14 GHz wideband transistor

Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Table 1: Quick reference data …continued
Symbol Parameter
Conditions
|s₂₁|² insertion power gain
NF
noise figure
I_C = 15 mA; V_CE = 3 V;
f = 1.8 GHz; T_amb = 25 °C;
Z_S = Z_L = 50 Ω
Γ_s = Γ_opt; I_C = 3 mA;
V_CE = 3 V; f = 2 GHz
Min Typ
-
14
-
1.1
[1] T_sp is the temperature at the soldering point of the collector pin.
[2] G_max is the maximum power gain, if K > 1. If K < 1 then G_max = MSG, see Figure 4.
Max Unit
-
dB
-
dB
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
Simplified outline Symbol
3
4
1
2
1
3
2, 4
sym086
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BFG325/XR
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
Version
SOT143R
4. Marking
Table 4: Marking codes
Type number
BFG325/XR
[1] * = p: made in Hong Kong.
5. Limiting values
Marking code ^[1]
S2*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_CBO
V_CEO
V_EBO
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
open base
open collector
Min Max Unit
-
15 V
-
6
V
-
2
V
9397 750 14247
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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