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| BFG325 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 14 GHz wideband transistor | |||
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Philips Semiconductors
BFG325/XR
NPN 14 GHz wideband transistor
Table 5: Limiting values â¦continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
IC
collector current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsp ⤠90 °C
Min
-
[1] -
â65
-
[1] Tsp is the temperature at the soldering point of the collector pin.
Max Unit
35 mA
210 mW
+175 °C
175 °C
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Rth(j-sp) thermal resistance from junction to solder point
[1] Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Conditions
Tsp ⤠90 °C
Typ
[1] 405
Unit
K/W
Table 7: Characteristics
Tj = 25 °C; unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off current
IE = 0 A; VCB = 5 V
-
hFE
DC current gain
IC = 15 mA; VCE = 3 V
60
CCBS collector-base capacitance
VCB = 5 V; f = 1 MHz; emitter grounded
-
CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded
-
CEBS emitter-base capacitance
VEB = 0.5 V; f = 1 MHz; collector grounded
-
fT
transition frequency
IC = 15 mA; VCE = 3 V; f = 1 GHz;
-
Tamb = 25 °C
Gmax maximum power gain [1]
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
-
Tamb = 25 °C
|s21|2 insertion power gain
IC = 15 mA; VCE = 3 V; Tamb = 25 °C;
ZS = ZL = 50 â¦
f = 1.8 GHz
-
f = 3 GHz
-
NF
PL(1dB)
IP3
noise ï¬gure
output power at 1 dB gain
compression
third order intercept point
Îs = Îopt; IC = 3 mA; VCE = 3 V; f = 2 GHz
-
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
-
Tamb = 25 °C; ZS = ZL = 50 â¦
IC = 15 mA; VCE = 3 V; f = 1.8 GHz;
-
Tamb = 25 °C; ZS = ZL = 50 â¦
[1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.
K is the Rollet stability factor: K = 1-----+------D-2----s-Ã---2---s-â--2--1--s--1-Ã--1----2s---1-â-2-----s--2--2----2- where Ds = s11 Ã s22 â s12 Ã s21 .
MSG = maximum stable gain.
Typ Max Unit
-
15 nA
100 200
0.26 0.4 pF
0.27 -
pF
0.53 -
pF
14
-
GHz
18.3 -
dB
14
-
10
-
1.1 -
8.7 -
19.4 -
dB
dB
dB
dBm
dBm
9397 750 14247
Product data sheet
Rev. 01 â 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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