English
Language : 

74HC2GU04_15 Datasheet, PDF (4/16 Pages) NXP Semiconductors – Dual unbuffered inverter
◁
NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Tamb = 25 C
VIH
HIGH-level input voltage
VCC = 2.0 V
1.7
VCC = 4.5 V
3.6
VCC = 6.0 V
4.8
VIL
LOW-level input voltage
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
VOH
HIGH-level output voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
1.9
IO = 20 A; VCC = 4.5 V
4.4
IO = 20 A; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
5.9
4.13
5.63
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
-
IO = 20 A; VCC = 4.5 V
-
IO = 20 A; VCC = 6.0 V
-
IO = 4.0 mA; VCC = 4.5 V
-
IO = 5.2 mA; VCC = 6.0 V
-
II
input leakage current
VI = GND or VCC; VCC = 6.0 V
-
ICC
supply current
VI = GND or VCC; IO = 0 A;
-
VCC = 6.0 V
CI
input capacitance
-
Tamb = 40 C to +85 C
VIH
HIGH-level input voltage
VCC = 2.0 V
1.7
VCC = 4.5 V
3.6
VCC = 6.0 V
4.8
VIL
LOW-level input voltage
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
VOH
HIGH-level output voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
1.9
IO = 20 A; VCC = 4.5 V
4.4
IO = 20 A; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
5.9
4.13
5.63
Typ
1.1
2.4
3.1
0.9
2.1
2.9
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
3.0
1.1
2.4
3.1
0.9
2.1
2.9
2.0
4.5
6.0
4.32
5.81
Max
-
-
-
0.3
0.9
1.2
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
0.1
1.0
-
-
-
-
0.3
0.9
1.2
-
-
-
-
-
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
pF
V
V
V
V
V
V
V
V
V
V
V
74HC2GU04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 16
 ▷