BUK130-50DL Datasheet, PDF (3/6 Pages) NXP Semiconductors – Logic level TOPFET SMD version of BUK119-50DL

Philips Semiconductors
Logic level TOPFET
SMD version of BUK119-50DL
Product specification
BUK130-50DL
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ T_mb ≤ 150˚C; typicals are for T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
V_IS = 0 V
V_(CL)DSS Drain-source clamping voltage I_D = 10 mA
50
I_DM = 4 A; t_p ≤ 300 µs; δ ≤ 0.01
50
I_DSS
Drain source leakage current V_DS = 40 V
-
T_mb = 25˚C
-
On-state
V_IS ≥ 4.4 V; t_p ≤ 300 µs; δ ≤ 0.01
R_DS(ON)
Drain-source resistance
I_DM = 10 A
-
T_mb = 25˚C
-
TYP.
-
60
-
0.1
-
22
MAX. UNIT
-
V
70
V
100 µA
10 µA
52 mΩ
28 mΩ
OVERLOAD CHARACTERISTICS
V_IS = 5 V; T_mb = 25˚C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
Short circuit load
I_D
Drain current limiting
Overload protection
V_DS = 13 V
4.4 V ≤ V_IS ≤ 5.5 V;
-40˚C ≤ T_mb ≤ 150˚C
P_D(TO)
T_DSC
Overload power threshold
Characteristic time
device trips if P_D > P_D(TO)
which determines trip time¹
Overtemperature protection
T_j(TO)
Threshold junction
temperature²
MIN. TYP. MAX. UNIT
28.5 43 57
A
21
-
65
A
75 185 250 W
200 380 600 µs
150 170 -
˚C
1 Trip time t_{d sc} varies with overload dissipation P_D according to the formula t_{d sc} ≈ T_DSC / ln[ P_D / P_D(TO)].
2 This is independent of the dV/dt of input voltage V_IS.
May 2001
3
Rev 1.900