BUK130-50DL Datasheet, PDF (2/6 Pages) NXP Semiconductors – Logic level TOPFET SMD version of BUK119-50DL

Philips Semiconductors
Logic level TOPFET
SMD version of BUK119-50DL
Product specification
BUK130-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V_DS
I_D
PARAMETER
Continuous drain source voltage¹
Continuous drain current
CONDITIONS
V_IS = 5 V; T_mb = 25˚C
MIN.
-
-
I_D
Continuous drain current
V_IS = 5 V; T_mb ≤ 121˚C
-
I_I
Continuous input current
-5
I_IRM
Repetitive peak input current
δ ≤ 0.1, tp = 300 µs
-50
P_D
Total power dissipation
T_mb ≤ 25˚C
-
T_stg
Storage temperature
-55
T_j
Continuous junction temperature²
normal operation
-
T_sold
Case temperature
during soldering
-
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
50
self -
limited
20
5
50
90
175
150
260
MAX.
2
UNIT
V
A
A
mA
mA
W
˚C
˚C
˚C
UNIT
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
E_DSM
E_DRM
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
I_DM = 20 A; V_DD ≤ 20 V
T_mb ≤ 25˚C
T_mb ≤ 95˚C; f = 250 Hz
-
350
mJ
-
45
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL PARAMETER
REQUIRED CONDITION
MIN. MAX. UNIT
V_DS
Drain source voltage³
4 V ≤ V_IS ≤ 5.5 V
0
35
V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance
Junction to mounting base
Junction to ambient
CONDITIONS
-
minimum footprint FR4 PCB
MIN. TYP. MAX. UNIT
- 1.25 1.39 K/W
-
50
- K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.900