TDA5155 Datasheet, PDF (20/24 Pages) NXP Semiconductors – Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads

Philips Semiconductors
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
Preliminary specification
TDA5155
SYMBOL
PARAMETER
CONDITIONS
MIN.
Switching characteristics
f_SCLK
∆V_o(cm)
serial interface clock rate
−
common mode DC output I_MR = 10 mA; I_WR = 35 mA
−
voltage change from read to
write mode
t_rec(W-R)
write-to-read recovery time
(AC and DC settling);
note 9
from 50% of the rising edge of
R/W to steady state read-back
signal: AC and DC settling at
90% (without load at RDx, RDy)
read amplifier OFF: d5 = 0 −
read amplifier ON: d5 = 1
−
t_sw(R)
head switching (in read
mode), standby to read
active and MR current
change recovery time.
(AC and DC settling);
note 10
from falling edge of SEN to
−
steady state read-back signal
(without load at RDx, RDy)
t_off(R)
read amplifier off time
from falling edge of R/W to read −
head inactive
t_st(W)
write settling times; note 11 from 50% of the falling edge of −
R/W to 90% of the steady state
write current (in write mode)
t_off(W)
t_sw(W)
write amplifier off time
from rising edge of R/W to
−
1_{⁄10 × IWR (programmed)}
(I_WR = 35 mA)
head switching (in write
from falling edge of SEN to write −
mode), and standby to write head active
head active
t_sw(S)
switch time to and from
−
sleep mode
DC characteristics
I_CC(R)
read mode supply current I_MR = 10 mA; note 12
−
I_CC(W)
write mode supply current I_WR = 35 mA; note 13
from V_CC (5 V)
−
from V_CC(WD) (5 to 8 V)
−
I_DD(STB)
standby mode supply
−
current
I_DD(S)
sleep mode supply current static
−
V_ref
reference voltage for R_ext
−
TYP.
−
200
3
100
3
−
−
−
50
−
72
33
54
0.25
−0.02
1.32
MAX.
25
−
4.5
150
4.5
50
70
50
70
100
80
41
61
1
−
−
UNIT
MHz
mV
µs
ns
µs
ns
ns
ns
ns
µs
mA
mA
mA
mA
mA
V
1997 Apr 08
20