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TDA5155 Datasheet, PDF (18/24 Pages) NXP Semiconductors – Pre-amplifier for Hard Disk Drive HDD with MR-read/inductive write heads
Philips Semiconductors
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
Preliminary specification
TDA5155
13 CHARACTERISTICS
VCC = 5.0 V; VCC(WD) = 8 V; VGND = 0 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Read characteristics
IMR
∆IMR
Gv(dif)
MR current adjust range
tolerance (excluding Rext)
differential voltage gain;
note 1
Rext = 10 kΩ; 0.5 mA steps
5
IMR programmed at 10 mA
−
from head inputs to RDx, RDy;
RMR = 28 Ω; IMR = 10 mA;
f = 20 MHz
d4 = 0
−
d4 = 1
−
Ri(dif)
differential input resistance IMR = 10 mA
−
Ci(dif)
differential input
−
capacitance
THD
total harmonic distortion
−
BL
lower signal gain pass-band −3 dB
−
edge
BH
higher signal gain
−3 dB; note 2
pass-band edge
without gain boost
−
(4 nH lead inductance)
with gain boost
−
(50 nH lead inductance)
F
Virn
BF(L)
noise figure
RMR = 28 Ω; IMR = 10 mA;
−
Tamb = 25 °C; f = 20 MHz
input referred noise voltage; RMR = 28 Ω; IMR = 10 mA;
−
note 3
Tamb = 25 °C; f = 20 MHz
lower noise band edge
RMR = 28 Ω; IMR = 10 mA;
−
(+3 dB)
Tamb = 25 °C;
no lead inductance
BF(H)
upper noise band edge
RMR = 28 Ω; IMR = 10 mA;
−
(+3 dB)
Tamb = 25 °C;
no lead inductance
αcs
PSRR
CMRR
channel separation; note 4 unselected head
−
power supply rejection ratio; f < 1 MHz; IMR = 10 mA
−
note 5
f < 100 MHz; IMR = 10 mA
−
common mode rejection
ratio; note 5
from nRx-nRy to RDx-RDy RMR
mismatch < 5%
IMR = 10 mA
f < 1 MHz
−
f < 100 MHz
−
TYP.
−
±4
160
226
13
16
1
−
220
170
3.0
0.9
−
220
50
80
50
45
25
MAX.
20.5
−
−
−
−
−
−
100
−
−
3.2
1.0
400
−
−
−
−
−
−
UNIT
mA
%
Ω
pF
%
kHz
MHz
MHz
dB
nV/√Hz
kHz
MHz
dB
dB
dB
dB
dB
1997 Apr 08
18