TDA8002 Datasheet, PDF (2/28 Pages) NXP Semiconductors – IC card interface

Philips Semiconductors
IC card interface
Product specification
TDA8002
FEATURES
• Single supply voltage interface (3.3 or 5 V environment)
• Low-power sleep mode
• Three specific protected half-duplex bidirectional
buffered I/O lines
• V_CC regulation (5 V ±5%, I_CC <65 mA at V_DD = 5 V, with
controlled rise and fall times
• Thermal and short-circuit protections with current
limitations
• Automatic ISO 7816 activation and deactivation
sequences
• Enhanced ESD protections on card side (>6 kV)
• Clock generation for the card up to 12 MHz with
synchronous frequency changes
• Clock generation up to 20 MHz (auxiliary clock)
• Synchronous and asynchronous cards (memory and
smart cards)
• ISO 7816, GSM11.11 compatibility and EMV (Europay,
Mastercard, Visa) compliant
• Step-up converter for V_CC generation
• Supply supervisor for spikes elimination and emergency
deactivation.
APPLICATIONS
• IC card readers for:
– GSM applications
– banking
– electronic payment
– identification
– Pay TV
– road tolling.
GENERAL DESCRIPTION
The TDA8002 is a complete low-power, analog interface
for asynchronous and synchronous cards. It can be placed
between the card and the microcontroller. It performs all
supply, protection and control functions. It is directly
compatible with ISO 7816, GSM11.11 and EMV
specifications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
Supply
V_DDA
I_DD
analog supply voltage
supply current
Card supply
V_CC(O)
I_CC(O)
output voltage
output current
General
f_CLK
card clock frequency
T_de
deactivation cycle time
P_tot
continuous total power dissipation
TDA8002AT; TDA8002BT
TDA8002G
T_amb
operating ambient temperature
sleep mode
idle mode; f_CLK = 2.5 MHz;
f_CLKOUT = 10 MHz; V_DD = 5 V
active mode; f_CLK = 2.5 MHz;
f_CLKOUT = 10 MHz; V_DD = 5 V
active mode; f_CLK = 2.5 MHz;
f_CLKOUT = 10 MHz; V_DD = 3 V
DC load <65 mA
V_CC short-circuited to GND
T_amb = −25 to +85 °C
T_amb = −25 to +85 °C
MIN. TYP. MAX. UNIT
3.0 5
−
−
−
−
−
−
−
−
6.5 V
150 µA
6
mA
9
mA
12 mA
4.75 −
−
−
5.25 V
100 mA
0
−
12 MHz
60 80 100 µs
−
−
−
−
−25 −
0.56 W
0.46 W
+85 °C
1997 Nov 04
2