PHT8N06LT Datasheet, PDF (2/9 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHT8N06LT
THERMAL RESISTANCES
SYMBOL
R_{th j-sp}
R_{th j-amb}
PARAMETER
From junction to solder point
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
TYP.
12
-
MAX.
15
70
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
±V_(BR)GSS
R_DS(ON)
Drain-source breakdown
V_GS = 0 V; I_D = 0.25 mA
voltage
T_j = -55˚C
Gate threshold voltage
V_DS = V_GS; I_D = 1 mA
T_j = 150˚C
T_j = -55˚C
Zero gate voltage drain current V_DS = 55 V; V_GS = 0 V;
T_j = 150˚C
Gate source leakage current V_GS = ±5 V
T_j = 150˚C
Gate source breakdown voltage I_G = ±1 mA
Drain-source on-state
V_GS = 5 V; I_D = 5 A
resistance
T_j = 150˚C
MIN.
55
50
1.0
0.6
-
-
-
-
-
10
-
-
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
-
65
-
MAX.
-
-
2.0
-
2.3
10
100
1
5
-
80
148
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T_mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_{d on}
t_r
t_{d off}
t_f
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
CONDITIONS
V_DS = 25 V; I_D = 5 A; T_j = 25˚C
I_D = 7 A; V_DD = 44 V; V_GS = 5 V
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; I_D = 7 A;
V_GS = 5 V; R_G = 10 Ω;
T_j = 25˚C
MIN.
4
-
-
-
-
-
-
-
-
-
-
TYP.
-
11.2
2.2
5
500
110
60
10
30
30
30
MAX.
-
-
-
-
650
135
85
15
50
45
40
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
T_sp = 25˚C
current
I_DRM
Pulsed reverse drain current T_sp = 25˚C
V_SD
Diode forward voltage
I_F = 5 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 5 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = -10 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
-
7.5 A
-
-
40
A
- 0.85 1.1 V
-
38
-
ns
-
0.2
-
µC
January 1998
2
Rev 1.100