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| PHN203 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Dual N-channel enhancement mode TrenchMOS transistor | |||
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Philips Semiconductors
Dual N-channel enhancement mode
TrenchMOSTM transistor
Product specification
PHN203
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-a
Rth j-a
Thermal resistance junction
to ambient
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted on FR4 board, t ⤠10
sec; either or both MOSFETs conducting
Surface mounted on FR4 board; either or
both MOSFETs conducting
TYP.
-
150
MAX.
62.5
-
UNIT
K/W
K/W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
Non-repetitive avalanche Unclamped inductive load, IAS = 6.3 A;
energy (per MOSFET)
tp = 0.2 ms; Tj prior to avalanche = 25ËC;
VDD ⤠15 V; RGS = 50 â¦; VGS = 10 V
IAS
Non-repetitive avalanche
current (per MOSFET)
MIN.
-
MAX.
20
UNIT
mJ
-
6.3
A
ELECTRICAL CHARACTERISTICS
Tj= 25ËC, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IDSS
IGSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Zero gate voltage drain
current
Gate source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 10 µA;
Tj = -55ËC
VDS = VGS; ID = 1 mA
Tj = 150ËC
Tj = -55ËC
VGS = 10 V; ID = 4 A
VGS = 4.5 V; ID = 2 A
VGS = 10 V; ID = 4 A; Tj = 150ËC
VDS = 20 V; ID = 4 A
VDS = 20 V; VGS = 0 V;
VDS = 20 V; VGS = 0 V; Tj = 150ËC
VGS = ±20 V; VDS = 0 V
ID = 4 A; VDD = 20 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 20 V; RD = 18 â¦;
VGS = 10 V; RG = 6 â¦
Resistive load
Internal drain inductance
Internal source inductance
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 20 V; f = 1 MHz
MIN. TYP. MAX. UNIT
25 -
-
V
22.5 -
-
V
1
2 2.8 V
0.4 -
-
V
-
3.2 V
- 27 30 mâ¦
- 40 55 mâ¦
- 43 51 mâ¦
5 9.7 -
S
- 60 100 nA
- 0.1 10 µA
- 10 100 nA
- 20 - nC
- 1.9 - nC
- 6.1 - nC
-
8
- ns
- 11 - ns
- 31 - ns
- 17 - ns
- 2.5 - nH
-
5
- nH
- 611 - pF
- 260 - pF
- 137 - pF
January 1999
2
Rev 1.000
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