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| BFU530W_15 Datasheet, PDF (2/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
Table 1. Quick reference data â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 10 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; ïS = ïopt
IC = 15 mA; VCE = 8 V; ZS = ZL = 50 ï;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K ï¼ 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
18.5
0.6
10
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU530W
-
plastic surface-mounted package; 3 leads
OM7960
-
Customer evaluation kit for BFU520W, BFU530W and BFU550W [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version
SOT323
-
Table 4. Marking
Type number
BFU530W
Marking
ZB*
Description
* = t : made in Malaysia
* = w : made in China
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 January 2014
© NXP B.V. 2014. All rights reserved.
2 of 22
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