BFU530W_15 Datasheet, PDF (15/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
















 



 
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V_CE = 8 V; 400 MHz  f  2 GHz.
(1) I_C = 1 mA
(2) I_C = 2 mA
(3) I_C = 3 mA
(4) I_C = 5 mA
(5) I_C = 8 mA
(6) I_C = 10 mA
(7) I_C = 15 mA
(8) I_C = 20 mA
(9) I_C = 25 mA
Fig 24. Optimum reflection coefficient (_opt); typical values

DDD
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be implemented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
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