BFU530W_15 Datasheet, PDF (19/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
12. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
13. Abbreviations
Table 12. Abbreviations
Acronym
Description
AEC
Automotive Electronics Council
ISM
Industrial, Scientific and Medical
LNA
Low-Noise Amplifier
MSG
Maximum Stable Gain
NPN
Negative-Positive-Negative
SMA
SubMiniature version A
14. Revision history
Table 13. Revision history
Document ID
Release date
BFU530W v.1
20140113
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
19 of 22