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| BFU530W_15 Datasheet, PDF (13/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
,3R
G%P
DDD
3/ G%
G%P
DDD
,& P$
,& P$
VCE = 8 V; Tamb = 25 ï°C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
Fig 18. Output third-order intercept point as a function
of collector current; typical values
VCE = 8 V; Tamb = 25 ï°C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
,3R
G%P
DDD
3/ G%
G%P
DDD
9&( 9
9&( 9
IC = 10 mA; Tamb = 25 ï°C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
Fig 20. Output third-order intercept point as a function
of collector-emitter voltage; typical values
IC = 10 mA; Tamb = 25 ï°C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 January 2014
© NXP B.V. 2014. All rights reserved.
13 of 22
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