SA3600 Datasheet, PDF (19/30 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Product specification
SA3600
J1
SMA
R11
000
HBLOUT
J2
SMA
HBLIN
J3
SMA
HBMIN
C2
100pF
R1
10
C6
1.8pF
C9
100pF
L3
2.7nH
R12
000
C1
0.5pF
C3
100nF
L4
1.8nH
C4
100pF
C5
100pF
L2
2.7nH L11 ^L12
L5
UL UL
1.8nH
C7
1.8pF
C6
100pF
R7
10
J4
SMA
HBLOOUT
C10
5.6pF
L10
10nH
PD1
PD2
C24
22pF
J5
SMA
LBLOOUT
C11
1.2pF
J12
V_CC
V_CC
GND
PD3
C12
J6
R10
1.5pF
SMA
10
L19
L18
LBLOUT
UL
TOKO 8.2nH
L16
8.2nH
R9
R8
UL
330
C13
100pF
C37
10nF
HBLNA_OUT
1
GND
2
HBLNA_IN
3
V_{CC 4}
HBMIX_IN-P
5
HBMIX_IN-N
6
PD1
7
GND
8
HBVCO_OUT ₉
PD2
10
GND ₁₁
LBVCO_OUT
12
SA3600
x2
LBLNA_OUT
24
GND
23
22 ^LBLNA_IN
21 ^VCC
20 ^LBMIX_IN
19 ^GND
18 ^MIXER_OUT-P
17 ^MIXER_OUT-N
16 ^GND
LBVCO_IN
15
14 ^PD3
13 ^HBVCO_IN
C16
100nF
L15
22nH
R4
10k
R3
10k
J11
SMA
C21
100pF
Mode Select
Sleep mode
Tx mode, LO LB Buffer
Rx mode cell, LO Gain
Rx mode cell, HI Gain
Rx mode PCS, LO Gain X2
Rx mode PCS, HI Gain X2
Rx mode PCS, LO Gain No X2
Rx mode PCS, HI Gain No X2
PD1 PD2 PD3
0 00
0 01
0 10
0 11
1 00
1 01
1 10
1 11
L13
2.7nH
C32
8.2pF
0402
C31
8.2pF
0402
C23
100pF
C34
10nF
J7
SMA
LBLIN
R2
10
C16
100pF C18
1nF
J8
SMA
C33
LBMIN
1pF
C28
6.8pF
C20
27pF
L7
180nH
L8
120nH
82MHz IF
C22
1nF
J9
SMA
L6
180nH
C19
27pF
MIXOUT
C27
6.8pF
L9
120nH
J10
SMA
C30
2.2pF
R6
10
C26
100nF
C25
100pF
C38
100pF
SR02236
Figure 37. SA3600 Application circuit (f_IF = 82 MHz)
1999 Nov 02
19