SA3600 Datasheet, PDF (14/30 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Product specification
SA3600
–18.0
–19.0
–20.0
–21.0
+25° C
+85° C
–40° C
–22.0
865
870
875
880
885
890
Frequency (MHz)
895 900
SR02213
Figure 14. LB LNA 1 dB compression versus frequency
(high gain mode)
–11.0
–12.0
–13.0
+85° C
–14.0
–15.0
–16.0
+25° C
–40° C
–17.0
1920
1930 1940
1950 1960 1970
Frequency (MHz)
1980
1990 2000
SR02214
Figure 15. HB LNA 1 dB compression versus frequency
(high gain mode)
17.0
–40° C
16.5
+25° C
16.0
+85° C
15.5
15.0
1920
1930
1940 1950
1960 1970
1980 1990 2000
Frequency (MHz)
SR02215
Figure 16. HB LNA gain versus frequency
–12.0
–13.0
–14.0
–15.0
–16.0
–17.0
–18.0
–40° C
+25° C
+85° C
1920 1930
1940
1950 1960 1970 1980
Frequency (MHz)
1990 2000
SR02216
Figure 17. HB LNA low gain versus frequency
3.0
+85° C
2.5
+25° C
2.0
–40° C
1.5
1.0
1920
1930
1940
1950 1960 1970 1980
Frequency (MHz)
1990 2000
SR02217
Figure 18. HB LNA noise figure versus frequency
(high gain mode)
0.0
–2.0
–4.0
–6.0
–8.0
+85° C
+25° C
–40° C
–10.0
1920 1930 1940 1950 1960 1970 1980 1990 2000
Frequency (MHz)
SR02218
Figure 19. HB LNA IIP3 versus frequency
(high gain mode)
1999 Nov 02
14