SA3600 Datasheet, PDF (18/30 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Product specification
SA3600
PMU
220 pF
10 kΩ
HB_LNA_OUT
1
PMU
RF
220 pF 220 pF
Source
10 kΩ
GND
2
HB_LNA_IN
3
5.6 nh
PMU
3 dB Pad
10 kΩ
PMU
220 pF
0.01 µF
100 pF
V_CC
4
100 pF
HB_MXR+_IN
5
HB_MXR–_IN
6
PMU
10 nh
LB_LNA_OUT
24
220 pF
1.8 pF
23 ^GND
22 ^LB_LNA_IN
21 ^VCC
LB_MXR_IN
20
GND
19
12 nh
10 kΩ
PMU
6.8 pF
100 pF
RF Source
PMU
0.01 µF
3 dB Pad
18 nh
10 kΩ
220 pF
PMU
10 nh
PMU
1 kΩ
PMU
RF Meas.
100 pF
0.1 pF
10 nh
PD1
7
GND
8
HB_VCO_OUT
9
RF Meas.
PMU
1 kΩ
10 kΩ
PMU
100 pF
4.7 nh
0.1 µF
PD2
10
GND
11
LB_VCO_OUT
12
MXR+_OUT
18
MXR–_OUT
17
8.2 pF
8.2 pF
470 nh 470 nh
10 pF
100 pF
RF Meas.
PMU
0.01 µF
16 ^GND
LB_VCO_IN
15
PD3
14
0.1 µF
13 ^HB_VCO_IN
10 kΩ
PMU
18 pF
1k
PMU
RF Source
4.7 nh
2.7 pF
RF Source
10 kΩ
PMU
SR02235
Figure 36. SA3600 production test circuit schematic
1999 Nov 02
18