SA3600 Datasheet, PDF (13/30 Pages) NXP Semiconductors – Low voltage dual-band RF front-end

Philips Semiconductors
Low voltage dual-band RF front-end
Product specification
SA3600
16.0
15.5
15.0
+85° C
14.5
+25° C
14.0
–40° C
2.5
3.0
3.5
V_CC (V)
4.0
SR02207
Figure 8. I_CC versus V_CC (mode 110 – HB receive, low gain,
doubler off)
24.0
22.0
+85° C
+25° C
20.0
–40° C
18.0
16.0
2.5
3.0
3.5
V_CC (V)
4.0
SR02208
Figure 9. I_CC versus V_CC (mode 111 – HB receive, high gain,
doubler off)
18.0
17.5
17.0
16.5
+85° C
16.0
865
870
875
880
885
Frequency (MHz)
–40° C
+25° C
890
895
900
SR02209
Figure 10. LB LNA gain versus frequency
–13.0
–14.0
–15.0
–16.0
–17.0
–40° C
+25° C
+85° C
–18.0
865
870
875
880
885
890
895
900
Frequency (MHz)
SR02210
Figure 11. LB LNA low gain versus frequency
3.0
2.5
+85° C
2.0
+25° C
1.5 ^{–40° C}
1.0
865
870
875
880
885
890
Frequency (MHz)
895
900
SR02211
Figure 12. LB LNA noise figure versus frequency
(high gain mode)
–4.0
–6.0
+85° C
+25° C
–8.0
–40° C
–10.0
865
870
875
880
885
890
Frequency (MHz)
895
900
SR02212
Figure 13. LB LNA IIP3 versus frequency
(high gain mode)
1999 Nov 02
13