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| ERZ-E14A471 Datasheet, PDF (9/18 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers (Type D) | |||
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âZNRâ Transient/Surge Absorbers (Type D)
â Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZE08A201 to ERZE08A511
2000
.BY
-FBLBHF$VSSFOU
1000
471
900
800
431
391
361
700
600
500
400
511
300
200
271
241
201
100
90
331
80
221
70
60
50
40
30
10-6 10-5
10-4 10-3 10-2
.BY$MBNQJOH7PMUBHF
ERZE08A201 to ERZE08A511
10000
2 times : 5 min. interval
511
up to 10 times : 2 min. interval
471
up to 106 times :10 sec. interval
431
391
361
331
271
241
1000
221
201
100 10104T5imTiemses
10
10 6Times
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
101
102
103
104
105
1
20
100
1000
Impulse Width (μs)
10000
ERZE08A561 to ERZE08A751
5000
4000
.BY
-FBLBHF$VSSFOU
3000
.BY$MBNQJOH7PMUBHF
ERZE08A561 to ERZE08A751
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
2000
1000
751
681
621
561
1000
900
800
700
600
500
400
561
300
751
681
Test Current Waveform
621
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
200
10-6 10-5 10-4 10-3 10-2 10-1 100
101
102 103
104
105
Current (A)
100
10
10
54TTiimmeess
10
10 6Times
1
20
100
1000
Impulse Width (μs)
10000
Design and speciï¬cations are each subject to change without notice. Ask factory for the current technical speciï¬cations before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
00 Aug. 2012
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