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ERZ-E14A471 Datasheet, PDF (11/18 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers (Type D)
“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZE10A201 to ERZE10A561
2000
1000
900
800
700
600
500
400
300
.BY
-FBLBHF$VSSFOU
511
471
431
391
361
561
200
271
241
201
100
90
80
331
221
70
60
50
40
30
10-6
10-5
10-4
10-3
10-2
.BY$MBNQJOH7PMUBHF
ERZE10A201 to ERZE10A561
10000
2 times : 5 min. interval
561
up to 10 times : 2 min. interval
511
up to 106 times :10 sec. interval
471
431
391
361
331
271
1000
241
221
201
100 11004T5iTmimeses
10
10 6Times
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
101
102
103
104
105
1
20
100
1000
10000
Impulse Width (μs)
ERZE10A621 to ERZE10A112
5000
4000
.BY
-FBLBHF$VSSFOU
3000
2000
.BY$MBNQJOH7PMUBHF
ERZE10A621 to ERZE10A112
10000
2 times : 5 min. interval
112
up to 10 times : 2 min. interval
102
up to 106 times :10 sec. interval
911
821
751
681
621
1000
102
911
821
1000
900
800
112
700
600
500
400
300
751
681
621
200
10-6
10-5 10-4 10-3 10-2
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
101
102
103 104
105
100 11004T5iTmimeses
10
10 6Times
1
20
100
1000
Impulse Width (μs)
10000
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Jul. 2013