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| ERZ-E14A471 Datasheet, PDF (13/18 Pages) Panasonic Semiconductor – “ZNR” Transient/Surge Absorbers (Type D) | |||
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âZNRâ Transient/Surge Absorbers (Type D)
â Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZE11A201 to ERZE11A511
2000
.BY
-FBLBHF$VSSFOU
1000
900
800
700
600
500
400
300
471
431
391
361
511
200
271
241
201
100
331
90
221
80
70
60
50
40
30
10-6
10-5
10-4
10-3
10-2
.BY$MBNQJOH7PMUBHF
ERZE11A201 to ERZE11A511
10000
2 times : 5 min. interval
511
471
431
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
391
361
331
271
241
1000
221
201
100 111000654TTTiimmimeeesss
10
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
101
102
103
104
105
1
20
100
1000
Impulse Width (μs)
10000
ERZE11A561 to ERZE11A112
5000
4000
.BY
-FBLBHF$VSSFOU
3000
2000
102
911
821
1000
900
800
112
700
600
500
400
561
300
751
681
621
200
10-6
10-5 10-4
10-3
10-2
.BY$MBNQJOH7PMUBHF
ERZE11A561 to ERZE11A112
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 106 times :10 sec. interval
112
102
911
821
1000
751
681
621
561
100
10 4Times
10 6Times
10
10-1 100
Current (A)
Test Current Waveform
10-6 to 10-3 A: Direct Current
10-1 to 104 A: 8/20 μs
101
102
103 104
105
1
20
100
1000
10000
Impulse Width (μs)
Design and speciï¬cations are each subject to change without notice. Ask factory for the current technical speciï¬cations before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
00 Aug. 2012
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