FG654301 Datasheet, PDF (5/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301(FET2)_C_iss , C_rss , C_oss -V_DS
C_iss , C_rss , C_oss  V_DS
25
T_a = 25°C
20
15
C_iss
10
C_oss
5
C_rss
0
0
−5
−10
−15
−20
Drain-source voltage V_DS (V)
FG654301(FET2)_|Y_fs|-I_D
Y_fs  I_D
1
T_a = 25°C
V_DS = −3 V
10^−1
10^−2
10_−^−3_10−1
−1
−10
−10²
Drain current I_D (mA)
FG654301
Ver. AED
5