FG654301 Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
Silicon N-channel MOS FET (FET1)
Silicon P-channel MOS FET (FET2)
For switching circuits
 Overview
FG654301 is N-P channel dual type small signal MOS FET employed small
size surface mounting package.
 Features
 Low drain-source ON resistance:
R_DS(on) typ. = 2 W (V_GS = 4.0 V) / 4 W (V_GS = –4.0 V)
 High-speed switching
 Small size surface mounting package: SMini6-F3-B
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Drain-source surrender voltage V_DSS
30
V
FET1 ^{Gate-source surrender voltage}
V_GSS
±12
V
Drain current
I_D
100
mA
Peak drain current
I_DP
200
mA
Drain-source surrender voltage V_DSS
–30
V
Gate-source surrender voltage
V_GSS
±12
V
FET2
Drain current
I_D
–100
mA
Peak drain current
I_DP
–200
mA
Total power dissipation
P_T
150
mW
Overall Channel temperature
T_ch
150
°C
Storage temperature
T_stg -55 to +150 °C
 Package
 Code
SMini6-F3-B
 Pin Name
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
 Marking Symbol: V7
 Internal Connection
(D1) (G2) (S2)
6
5
4
FET1
FET2
1
2
3
(S1) (G1) (D2)
Publication date: January 2011
Ver. AED
1