FG654301 Datasheet, PDF (2/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

FG654301
This product complies with the RoHS Directive (EU 2002/95/EC).
 Electrical Characteristics T_a = 25°C±3°C
 FET1
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
V_DSS
I_DSS
I_GSS
V_TH
I_D = 1 mA, V_GS = 0
V_DS = 30 V, V_GS = 0
V_GS = ±10 V, V_DS = 0
I_D = 1.0 mA, V_DS = 3.0 V
30
V
1.0
mA
±10
mA
0.5
1.0
1.5
V
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance (Common source)
R_DS(on)
Y_fs
C_iss
I_D = 10 mA, V_GS = 2.5 V
I_D = 10 mA, V_GS = 4.0 V
I_D = 10 mA, V_DS = 3.0 V
3
6
W
2
3
20
55
mS
12
pF
Short-circuit output capacitance (Common source) C_oss V_DS = 3 V, V_GS = 0, f = 1 MHz
7
pF
Reverse transfer capacitance (Common source) C_rss
3
pF
Turn-on time ^*
t_on V_DD = 3 V, V_GS = 0 V to 3 V, I_D = 10 mA
100
ns
Turn-off time ^*
t_off V_DD = 3 V, V_GS = 3 V to 0 V, I_D = 10 mA
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
V_DD = 3 V
V_GS = 0 V to 3 V
V_IN
G
50 Ω
I_D = 10 mA
R_L = 300 Ω
V_IN
D
V_OUT
V_OUT
90%
10%
10%
90%
S
t_on
t_off
 FET2
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
V_DSS
I_DSS
I_GSS
I_D = -1 mA, V_GS = 0
V_DS = -30 V, V_GS = 0
V_GS = ±10 V, V_DS = 0
-30
V
-1.0
mA
±10
mA
Gate threshold voltage
Drain-source ON resistance
V_TH
R_DS(on)
I_D = -1.0 mA, V_DS = -3.0 V
I_D = -10 mA, V_GS = -2.5 V
I_D = -10 mA, V_GS = -4.0 V
- 0.5 -1.0 -1.5
V
7
17
W
4
7
Forward transfer admittance
Y_fs I_D = -10 mA, V_DS = -3.0 V
20
40
mS
Short-circuit input capacitance (Common source) C_iss
12
pF
Short-circuit output capacitance (Common source) C_oss V_DS = -3 V, V_GS = 0, f = 1 MHz
7
pF
Reverse transfer capacitance (Common source) C_rss
3
pF
Turn-on time ^*
t_on V_DD = -3V,V_GS = 0Vto -3V, I_D = -10 mA
100
ns
Turn-off time ^*
t_off V_DD = -3V,V_GS = -3Vto 0V, I_D = -10 mA
100
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
V_GS = 0 V to −3 V
V_IN
G
50 Ω
V_DD = −3 V
I_D = −10 mA
R_L = 300 Ω
D
V_OUT
10%
V_IN
V_{OUT 10%}
90%
90%
S
t_d(on) t_r
t_d(off) t_f
2
Ver. AED