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FG654301 Datasheet, PDF (4/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET | |||
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FG654301
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301(FET1)_Ciss , Crss , Coss -VDS
Ciss , Crss , Coss  VDS
25
Ta = 25°C
20
15
Ciss
FG654301(FET1)_|Yfs|-ID
Yfs  ID
1
Ta = 25°C
VDS = 3 V
10â1
10
Coss
5
Crss
10â2
0
0
5
10
15
20
Drain-source voltage VDS (V)
10â3
1
10
102
103
Drain current ID (mA)
CharacteristicFsGc6h5a4r3t0s1o(FfEFTE2T)_2ID-VDS
ID  VDS
â100
Ta = 25°C
â80
VGS = â4.5 V
â2.5 V
â60
â40
â20
â1.5 V
0
0 â 0.1 â 0.2 â 0.3 â 0.4 â 0.5
Drain-source voltage VDS (V)
FG654301(FET2)_ RDS(on)-ID
RDS(on)  ID
102
Ta = 25°C
FG654301(FET2)_ ID-VGS
ID  VGS
â102
VDS = â3 V
â10
Ta = 85°C
â1
â10â1
25°C
â10â2
â30°C
â10â3
0
â 0.5 â1.0 â1.5 â2.0
Gate-source voltage VGS (V)
FG654301(FET2)_ RDS(on)-VGS
RDS(on)  VGS
103
Ta = 25°C
ID = â 0.01 A
102
10
1
0 â2 â4 â6 â8 â10
Gate-source voltage VGS (V)
10
VGS = â2.5 V
â4.0 V
1
10â1
â10â1
â1
â10
â102
Drain current ID (mA)
4
Ver. AED
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