XP03312_13 Datasheet, PDF (4/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2

XP03312
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of Tr2
I_C  V_CE
V_CE(sat)  I_C
h_FE  I_C
−160
IB = −1.0 mA ^{Ta = 25°C}
−100
IC / IB = 10
400
VCE = −10 V
− 0.9mA
− 0.8mA
−120
− 0.7mA
−10
300
− 0.6mA
− 0.5mA
−80
− 0.4mA
−1
Ta = 75°C
200
25°C
/ _{− 0.3mA}
25°C
Ta = 75°C
−25°C
−40
− 0.2mA
− 0.1
100
e _{− 0.1mA}
c _{ge. 0}
ta _{0 −2 −4 −6 −8 −10 −12}
n ^d le ^{s Collector-emitter voltage VCE (V)}
−25°C
− 0.01
− 0.1
−1
−10
−100
Collector current I_C (mA)
0
−1
−10
−100
−1 000
Collector current I_C (mA)
a ^e lifecyc _{Cob  VCB}
ct ₆
n ^{u u f=1MHz}
d _{IE = 0}
ro T_a = 25°C
5
te ^{tin fourP 4}
wing ^{type tion.} ₃
in ⁿ_es ^{follotenancetype} _{typed forma} / ₂
a _{coed incluedd maintenancetinued type test} ^{in .jp/en 1}
M _is tinu ^{lan ain con ed ut la ic.co 0}
is ^{u o n −0.1}
−1
−10
−100
D_{Maintenance/Discon} ^{pPleaspemlavnihsetittdpfo:dd/l/liwoscwwoiwnn.gtsineUmRiLcoanb.panaso Collector-base voltage VCB (V)}
I_O  V_IN
V_IN  I_O
−10⁴
V_O = −5 V
T_a = 25°C
−100
VO = − 0.2 V
Ta = 25°C
−10³
−10
−10²
−1
−10
− 0.1
−1
− 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4
Input voltage VIN (V)
− 0.01
− 0.1
−1
−10
−100
Output current I_O (mA)
4
SJJ00158CED