XP03312_13 Datasheet, PDF (2/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2

XP03312
This product complies with the RoHS Directive (EU 2002/95/EC).
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
50
V
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = 50 V, I_B = 0
0.5
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.2 mA
/ _{Forward current transfer ratio}
h_FE V_CE = 10 V, I_C = 5 mA
60

Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
V
e _{Output voltage high-level}
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
V
e. ^{Output voltage low-level}
V_OL V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
0.2
V
c _{tag Input resistance}
R₁
−30% 22 +30% kΩ
n ^d le ^{s Resistance ratio}
R₁ / R₂
0.8 1.0 1.2

yc Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
MHz
a ^e lifec ^{Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.}
ct • Tr2
n ^{u du} Parameter
Symbol
Conditions
Min Typ Max Unit
Pro _{Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0}
−50
V
te ^{tin four Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0}
−50
V
ing _type ^{n. Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0}
− 0.1 µA
w ^tio Collector-emitter cutoff current (Base open) I_CEO V_CE = −50 V, I_B = 0
− 0.5 µA
in ^{n follo ance pe ed rma Emitter-basecutoffcurrent(Collectoropen) IEBO VEB = −6 V, IC = 0}
− 0.2 mA
a ^{o ludes inten e ty typ info n/ Forward current transfer ratio}
h_FE V_CE = −10 V, I_C = −5 mA
60

c _ed ^inc _ed ^ma _tenanc ^{tinued type test .jp/e Collector-emitter saturation voltage}
V_CE(sat) I_C = −10 mA, I_B = − 0.3 mA
− 0.25 V
u ^{n in on d t la .co Output voltage high-level}
V_OH V_CC = −5 V, V_B = − 0.5 V, R_L = 1 kΩ −4.9
V
M _is tin ^{la a c e u ic Output voltage low-level}
V_OL V_CC = −5 V, V_B = −2.5 V, R_L = 1 kΩ
− 0.2 V
p ^m dis tinu ^{abo son Input resistance}
R₁
−30% 22 +30% kΩ
con ^{ed on L na Resistance ratio}
R₁ / R₂
0.8 1.0 1.2

is _lan ^{isc UR .pa Transition frequency}
f_T
V_CB = −10 V, I_E = 1 mA, f = 200 MHz
80
MHz
e/D ^{p d ing icon Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.}
D_{anc llow em Common characteristics chart}
inten ^{it fo w.s PT  Ta}
is ^w ₂₅₀
Ma _Please ^vhttp://w ₂₀₀
150
100
50
0
0
40
80
120
160
Ambient temperature T_a (°C)
2
SJJ00158CED