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XP03312_13 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2 | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP03312
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
â Features
â Package
/ ⢠Two elements incorporated into one package
⢠Code
(Transistors with built-in resistor)
SMini5-G1
e ⢠Reduction of the mounting area and assembly cost by one half
c ge. â Basic Part Number
n d sta ⢠UNR2212 + UNR2112
ycle â Absolute Maximum Ratings Ta = 25°C
a e lifec Parameter
Symbol Rating
Unit
ct Tr1
Collector-base voltage
VCBO
50
V
n u du (Emitter open)
ro Collector-emitter voltage VCEO
50
V
te tin rP (Baseopen)
g fou e Collector current
IC
100
mA
win typ tion. Tr2
Collector-base voltage
VCBO
â50
V
in n llo ce a (Emitter open)
fo an pe ed rm Collector-emitter voltage VCEO
â50
V
a o ludes inten e ty typ info n/ (Base open)
M Disc Maintenance/Discontinued ipnPlcalenaesdpemmlavanaihsientittdtpefo:dnd/l/ialiwsosnccwwcooiwnnnt.gtisinneUuumeRedidLcotaynbp.opeuatnlaasteosntic.co.jp/e Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC
â100
mA
PT
150
mW
Tj
150
°C
Tstg â55 to +150 °C
⢠Pin Name
1:Emitter (Tr1)
2: Base (Tr1)
3:Emitter (Tr2)
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
â Marking Symbol: 4P
â Internal Connection
5
4
Tr1
Tr2
123
Publication date: May 2009
SJJ00158CED
1
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