XP03312_13 Datasheet, PDF (3/6 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).
XP03312
Characteristics charts of Tr1
I_C  V_CE
160
Ta = 25°C
V_CE(sat)  I_C
100
IC / IB = 10
400
h_FE  I_C
VCE = 10 V
IB = 1.0 mA
0.9 mA
120
0.8 mA
0.7 mA
0.6 mA
10
0.5 mA
0.4 mA
300
Ta = 75°C
80
1
200
0.3 mA
25°C
/ _25°C
Ta = 75°C
40
0.2 mA
0.1
−25°C
100
e _{. 0.1mA}
c _{tage 0}
0 2 4 6 8 10 12
n ^d le ^{s Collector-emitter voltage V}CE ^(V)
a ^e lifecyc _{Cob  VCB}
ct ₆
n ^{u u f=1MHz}
d _{IE = 0}
ro _{Ta = 25°C}
5
te ^{tin fourP 4}
wing ^{type tion.} ₃
in ⁿ_es ^{follotenancetype} _{typed forma} / ₂
a _{coed incluedd maintenancetinued type test} ^{in .jp/en 1}
M _is tinu ^{lan ain con ed ut la ic.co 0}
is ^{u o n 0.1}
1
10
100
D_{Maintenance/Discon} ^{pPleaspemlavnihsetittdpfo:dd/l/liwoscwwoiwnn.gtsineUmRiLcoanb.panaso Collector-base voltage VCB (V)}
−25°C
0.01
0.1
1
10
100
Collector current I_C (mA)
I_O  V_IN
10⁴
V_O = 5 V
T_a = 25°C
10³
10²
10
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage V_IN (V)
0
1
10
100
1 000
Collector current I_C (mA)
V_IN  I_O
100
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.01
0.1
1
10
100
Output current I_O (mA)
SJJ00158CED
3