N01S830HA Datasheet, PDF (9/13 Pages) ON Semiconductor – 1 Mb Ultra-Low Power Serial SRAM

N01S830HA, N01S830BA
Table 5. MODE REGISTER
Bit
Function
0
Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1
Reserved
2
Reserved
3
Reserved
4
Reserved
5
Reserved
6
Operating Mode
Bit 7 Bit 6
0
0 = Word Mode
7
1
0 = Page Mode
0
1 = Burst Mode (Default)
1
1 = Reserved
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS = 1. A low
level on CS is required to enter a active state.
Battery Back-Up Operation
The Battery Back-Up function is available on the BBU
version of the serial SRAM. This version of the SRAM
cannot operate in the QUAD mode since the SIO3 input is
used for the VBAT connection. A standard coin cell battery
should be connected to the VBAT pin. On chip circuitry
monitors the V_CC pin and when it is determined that the main
V_CC power supply is turning off, the device automatically
switches the memory array to VBAT power input. When in
battery back-up mode and 3.0 to 3.4 V power supplied to the
VBAT input, memory data is retained in the SRAM array
and all existing interface and operating mode information is
retained.
CS
SO
NC
VSS
Serial
SRAM
VCC
VBAT
SCK
SI
Coin Cell Battery
3.0 to 3.4 V
Figure 15. Battery Back-Up Version Schematics
Table 6. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Units
Voltage on any pin relative to V_SS
V_IN,OUT
–0.3 to V_CC + 0.3
V
Voltage on V_CC Supply Relative to V_SS
V_CC
–0.3 to 5.5
V
Power Dissipation
P_D
500
mW
Storage Temperature
T_STG
–40 to 125
°C
Operating Temperature
T_A
-40 to +85
°C
Soldering Temperature and Time
T_SOLDER
260°C, 10 sec
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 7. OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Item
Symbol
Test Conditions
Min
Supply Voltage
Data Retention Voltage (Note 2)
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
V_CC
V_DR
V_IH
V_IL
V_OH
V_OL
I_LI
I_LO
I_CC
2.5
I_OH = −0.4 mA
I_OL = 1 mA
CS = V_CC, V_IN = 0 to V_CC
CS = V_CC, V_OUT = 0 to V_CC
f = 20 MHz, I_OUT = 0, SPI / DUAL
0.7 V_CC
−0.3
V_CC − 0.2
f = 20 MHz, I_OUT = 0, QUAD
Standby Current
I_SB
CS = V_CC, V_IN = V_SS or V_CC
1. Typical values are measured at V_CC = V_CC Typ., T_A = 25°C and are not 100% tested.
2. Typical lower limit of VCC when data will be retained in the memory array, not 100% tested.
Typ (Note 1)
1.0
4
Max
5.5
V_CC + 0.3
0.1 V_CC
0.2
1.0
1.0
10
20
10
Units
V
V
V
V
V
V
mA
mA
mA
mA
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