N01S818HA Datasheet, PDF (9/12 Pages) ON Semiconductor – 1 Mb Ultra-Low Power Serial SRAM

N01S818HA
Table 8. CAPACITANCE (Note 3)
Item
Symbol
Test Conditions
Input Capacitance
C_IN
V_IN = 0 V, f = 1 MHz, T_A = 25°C
I/O Capacitance
C_I/O
V_IN = 0 V, f = 1 MHz, T_A = 25°C
3. These parameters are verified in device characterization and are not 100% tested.
Min
Max
7
7
Table 9. TIMING TEST CONDITIONS
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
Value
0.1 V_CC to 0.9 V_CC
5 ns
0.5 V_CC
CL = 30 pF
−40 to +85°C
Units
pF
pF
Table 10. TIMING
Item
Clock Frequency
Clock Period
Clock Rise Time
Clock Fall Time
Clock High Time
Clock Low Time
Clock Delay Time
CS Setup Time
CS Hold Time
CS Disable Time
SCK to CS
Data Setup Time
Data Hold Time
Output Valid From Clock Low
Output Hold Time
Output Disable Time
HOLD Setup Time
HOLD Hold Time
HOLD Low to Output High-Z
HOLD High to Output Valid
Symbol
f_CLK
t_CLK
t_R
t_F
t_HI
t_LO
t_CLD
t_CSS
t_CSH
t_CSD
t_SCS
t_SU
t_HD
t_V
t_HO
t_DIS
t_HS
t_HH
t_HZ
t_HV
Min
Max
20
50
20
20
25
25
25
25
50
25
5
10
10
25
0
20
10
10
10
50
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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