NSVMMUN2212LT1G Datasheet, PDF (8/12 Pages) ON Semiconductor – NPN Transistors with Monolithic Bias Resistor Network

MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
PACKAGE DIMENSIONS
E
A
A1
D
3
1
2
e
HE
b
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
SEE VIEW C
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b
0.37
0.44
0.50
c
0.09
0.13
0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e
1.78
1.90
2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
H E 2.10
2.40
2.64
q
0°
−−−
10°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
ǒ Ǔ _{SCALE 10:1}
mm
inches
http://onsemi.com
8