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NSVMMUN2212LT1G Datasheet, PDF (4/12 Pages) ON Semiconductor – NPN Transistors with Monolithic Bias Resistor Network
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MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC124EF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 4)
(Note 3)
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
Thermal Resistance, Junction to Lead
(Note 3)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
−55 to +150
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
0.2
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
60
100
−
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
−
1.2
0.8
Input Voltage (on)
(VCE = 0.3 V, IC = 5.0 mA)
Vi(on)
2.5
1.6
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Input Resistor
R1
15.4
22
28.6
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R1/R2
0.8
1.0
1.2
Unit
mW
mW/°C
°C/W
°C/W
°C
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
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